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Semiconductor devices : physics and technology
Résumé
Introduction : Semiconductor devices 1; Semiconductor technology 6; I. Semiconductor physics : Energy bands and carrier concentration in thermal equilibrium : Semiconductor materials 15; Basic crystal structures 17; Valence bonds 22; Energy bands 23; Intrinsic carrier concentration 29; Donors and acceptors 34; 2.
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Carrier transport phenomena : Carrier drift 43; Carrier diffusion 53; Generation and recombination processes 56; Continuity equation 62; Thermionic emission process 68; Tunneling process 69; Space-charge effect 71; High-field effects 73; II. Semiconductor devices : 3. p-n junction 82; Thermal equilibrium condition 83; Depletion region 87; Depletion capacitance 95; Current-voltage characteristics 99; Charge storage and transient behavior 108; Junction breakdown 111; Heterojunction 117; 4. Bipolar transistors and related devices 123; Transistor action 124; Static characteristics of bipolar transistors 129; Frequency response and switching of bipolar transistors 137; Nonideal effects 142; Heterojunction bipolar transistors 146; Thyristors and related power devices 149; 5. MOS capacitor and MOSFET : Ideal MOS capacitor 160; SiO2-Si MOS capacitor 169; Carrier transport in MOS capacitors 174; Charge-coupled devices 177; MOSFET fundamentals 180; 6. Advanced MOSFET and related devices : MOSFET scaling 195; CMOS and BiCMOS 205; MOSFET on insulator 210; MOS memory structures 214; Power MOSFET 223; 7. MESFET and related devices 228; Metal-semiconductor contacts 229; MESFET 240; MODFET 249; 8. Microwave diodes, quantum-effect and hot-electron devices : Microwave frequency bands 259; Tunnel diode 260; IMPATT diode 260; Transferred-electron devices 265; Quantum-effect devices 269; Hot-electron devices 274; 9. Light emitting diodes and lasers : Radiative transitions and optical absorption 280; Light-emitting diodes 286; Various light-emitting diodes 291; Semiconductor lasers 302; 10. Photodetectors and solar cells : Photodetectors 323; Solar cells 336; Silicon and compound-semiconductor solar cells 343; Third-generation solar cells 348; Optical concentration 352; III. Semiconductor technology : 11. Crystal growth and epitaxy : Silicon crystal growth from the melt 357; Silicon float-zone proces 363; GaAs crystal-growth techniques 367; Material characterization 370; Epitaxial-growth techniques 377; Structures and defects in epitaxial layers 384; 12. Film formation : Thermal oxidation 392; Chemical vapor deposition of dielectrics 400; Chemical vapor deposition of polysilicon 409; Atom layer deposition 412; Metallization 414; 13. Lithography and etching : Optical lithography 428; Next-generation lithographic methods 441; Wet chemical etching 447; Dry etching 450; 14. Impurity doping : Basic diffusion process 467; Extrinsic diffusion 476; Diffusion-related processes 480; Range of implanted ions 483; Implant damage and annealing 490; Implantation-related processes 495; 15. Integrated devices : Passive components 507; Bipolar technology 511; MOSFET technology 516; MESFET technology 529; Challenges for nanoelectronics 532; Appendices : A. List of symbols 541; B. International Systems of Units (SI Units) 543; C. Unit prefixes 544; D. Greek alphabet 545; E. Physical constants 546; F. Properties of important element and binary compound semiconductors at 300°K 547; G. Properties of Si and GaAs at 300°K 548 ... Index 565; Contents V.
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